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| Ordering number : ENA1285 TF202THC SANYO Semiconductors DATA SHEET TF202THC Features * * * * * * N-channel Silicon Juncton FET Electret Condenser Microphone Applications Ultrasmall package facilitates miniaturization in end products. Especially suited for use in electret condenser microphone for audio equipments and telephones. Excellent voltage characteristics. Excellent transient characteristics. Adoption of FBET process. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25C Parameter Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VGDO IG ID PD Tj Tstg Conditions Ratings --20 10 1 100 150 --55 to +150 Unit V mA mA mW C C Electrical Characteristics at Ta=25C Parameter Gate-to-Drain Breakdown Voltage Cutoff Voltage Symbol V(BR)GDO VGS(off) IG=--100A VDS=5V, ID=1A Conditions Ratings min --20 --0.2 --0.6 --1.0 typ max Unit V V Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. www.semiconductor-sanyo.com/network 82008GB TI IM TC-00001480 No.A1285-1/5 TF202THC Continued from preceding page. Parameter Drain Current Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance Symbol IDSS | yfs | Ciss Crss Conditions VDS=5V, VGS=0V VDS=5V, VGS=0V, f=1kHz Ratings min 140* 0.5 1.0 3.5 0.65 --3.0 --1.2 25 1000 1.2 --110 --3.5 --1.0 typ max 350* Unit A mS pF pF dB dB dB M % dB VDS=5V, VGS=0V, f=1MHz VDS=5V, VGS=0V, f=1MHz [Ta=25C, VCC=4.5V, RL=1k, Cin=15pF, See specified Test Circuit.] Voltage Gain Reduced Voltage Characteristic Frequency Characteristic Input Impedance Output Impedance Total Harmonic Distortion Output Noise Voltage GV GVV Gvf ZIN ZO THD VNO VIN=10mV, f=1kHz VIN=10mV, f=1kHz, VCC=4.5V 1.5V f=1kHz to 110Hz f=1kHz f=1kHz VIN=30mV, f=1kHz VIN=0V, A Curve * : The TF202THC is classified by IDSS as follows : (unit : A) Marking Rank IDSS E4 4 140 to 240 E5 5 210 to 350 Package Dimensions unit : mm (typ) 7031-001 Top View 1.4 0.2 0.25 3 1.2 0.8 Test Circuit Voltage gain Frequency Characteristic Distortion Reduced Voltage Characteristic 1k VCC=4.5V VCC=1.5V 1 0.2 2 0.2 0.45 0.34 0.1 15pF 33F + VTVM V OSC THD BA Bottom View 0.07 Output Impedance 1 : Drain 2 : Source 3 : Gate SANYO : VTFP 0.07 500 450 400 ID -- VDS 500 450 400 ID -- VDS Drain Current, ID -- A Drain Current, ID -- A 350 300 250 200 150 100 50 0 0 1 2 3 4 5 6 350 300 250 200 VGS=0V VGS=0V --0.1V --0.1V 150 100 50 0 0 1 2 3 --0.2V --0.3V --0.4V 7 8 --0.2V --0.5V 9 10 IT02310 --0.3V --0.4V 4 --0.5V 5 IT03015 Drain-to-Source Voltage, VDS -- V Drain-to-Source Voltage, VDS -- V No.A1285-2/5 TF202THC 500 450 400 ID -- VGS VDS=5V 400 360 320 ID -- VGS VDS=5V Drain Current, ID -- A 350 300 250 200 150 100 50 0 --0.7 --0.6 --0.5 --0.4 --0.3 --0.2 --0.1 0 Drain Current, ID -- A 280 240 200 160 120 80 40 0 --1.0 --0.9 --0.8 --0.7 --0.6 --0.5 --0.4 --0.3 --2 --0.2 --0.1 15 5 C 0 A Ta = 25 75 C ID 5 =3 SS A 0 25 C A 0 --0 Gate-to-Source Voltage, VGS -- V 1.3 | yfs | -- IDSS IT02312 -0.70 -0.65 Gate-to-Source Voltage, VGS -- V VGS(off) -- IDSS IT02313 Forward Transfer Admittance, | yfs | -- mS 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0 Cutoff Voltage, VGS(off) -- V VDS=5V VGS=0V f=1kHz VDS=5V ID=1A -0.60 -0.55 -0.50 -0.45 -0.40 -0.35 -0.30 100 200 300 400 Drain Current, IDSS -- A 2 500 IT02314 5 0 100 200 300 400 Ciss -- VDS Drain Current, IDSS -- A 500 IT02315 Crss -- VDS Reverse Transfer Capacitance, Crss -- pF VGS=0V f=1MHz Input Capacitance, Ciss -- pF 10 7 5 3 2 VGS=0V f=1MHz 1.0 7 5 3 2 3 2 1.0 7 1.0 2 3 5 7 10 2 3 0.1 7 1.0 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V 0 --1 GV -- IDSS IT03814 --0.5 Drain-to-Source Voltage, VDS -- V GVV -- IDSS IT03815 Voltage Gain, GV -- dB --2 --3 --4 --5 --6 --7 0 GV : VCC=4.5V VIN=10mV f=1kHz RL=1.0k Cin=15pF IDSS : VDS=5.0V Reduced Voltage Characteristic, GVV -- dB --0.7 --0.9 --1.1 --1.3 --1.5 --1.7 0 100 200 GVV : VCC=4.5V1.5V VIN=10mV f=1kHz RL=1.0k Cin=15pF IDSS : VDS=5.0V 300 400 100 200 300 400 Drain Current, IDSS -- A 500 IT13910 Drain Current, IDSS -- A 500 IT13911 No.A1285-3/5 TF202THC 2.5 THD -- IDSS Total Harmonic Distortion, THD -- % THD : VCC=4.5V VIN=30mV f=1kHz RL=1.0k Cin=15pF IDSS : VDS=5.0V 100 THD -- VIN THD : VCC=4.5V f=1kHz IDSS : VDS=5.0V Total Harmonic Distortion, THD -- % 2.0 10 250A 1.5 150A I DSS= 350A 1.0 1.0 0.5 0 0 100 200 300 400 0.1 Drain Current, IDSS -- A 32 ZIN -- IDSS 500 IT13912 960 0 50 100 150 200 IT02316 Input Voltage, VIN -- mV ZO -- IDSS Input Impedance, ZIN -- M 31 30 Output Impedance, ZO -- ZIN :VCC=4.5V VIN=10mV f=1kHz IDSS : VDS=5.0V 950 ZO : VCC=4.5V VIN=10mV f=1kHz IDSS : VDS=5.0V 940 29 930 28 920 27 910 26 0 100 200 300 400 900 Drain Current, IDSS -- A --111 --112 VNO -- IDSS 500 IT02323 120 0 100 200 300 400 Drain Current, IDSS -- A PD -- Ta 500 IT02324 Allowable Power Dissipation, PD -- mW Output Noise Voltage, VNO -- dB --113 --114 --115 --116 --117 --118 --119 --120 0 100 200 VNO : VCC=4.5V VIN=0V, ACurve RL=1.0k Cin=15pF IDSS : VDS=5.0V 100 80 60 40 20 0 300 400 Drain Current, IDSS -- A 500 IT13913 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C IT02317 No.A1285-4/5 TF202THC SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of August, 2008. Specifications and information herein are subject to change without notice. PS No.A1285-5/5 |
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